| 摘要 |
PURPOSE: A method for fabricating a bottom gate type thin-film-transistor(TFT) is provided to improve an electrical characteristic and reliability of the TFT, by minimizing the influence of a hot carrier, by improving a punch-through characteristic and by greatly reducing a leakage current. CONSTITUTION: A gate electrode(21a) is formed on a predetermined lower layer(20). A gate insulation layer covering at least the gate electrode is formed. A polysilicon layer(23) for a channel is formed along the surface of the resultant structure having the gate insulation layer. An ion implantation barrier overlapping the gate electrode is formed by using a low-density doping offset(LDO) mask. An ion implantation process using inert gas as dopants is performed regarding the polysilicon layer for the channel by using the ion implantation barrier. A low-density doping offset ions are implanted to the polysilicon layer for the channel by using the ion implantation barrier. A source/drain ion implantation process is performed regarding the polysilicon layer for the channel.
|
