| 摘要 |
PURPOSE: An apparatus for processing a substrate is provided to eliminate resists, by suppressing metallic contamination of a wafer, generation of particles and growth of an oxide layer. CONSTITUTION: An ozone gas feed system(40) for feeding ozone gas(2) into a processing vessel(10) holding wafers(W), and a steam feed unit(30) for feeding steam(1) into the processing vessel are provided. An on-off valve(49) inserted in the ozone gas feed pipe(42), an on-off valve(36) inserted in the steam feed pipe(34), and a switch(48) and the on-off valve(49) of an ozone gas generator(41) are connected to a CPU(100) which is a control unit and are controlled by the CPU. Ozone gas is fed into the processing vessel to pressurize the atmosphere surrounding the wafers, and then steam is fed into the processing vessel while ozone gas is fed into the processing vessel, whereby a resist of the wafers can be removed with the steam and the ozone gas while metal corrosion, etc., can be prevented.
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