| 摘要 |
PURPOSE: A semiconductor device is provided to reduce a leakage current by reducing the width of an IGFET(insulated gate field effect transistor). CONSTITUTION: NAND gate circuits(G1-G4) share an n-type MOS field effect transistor(N2) having a current path connected between a node(Q) where a signal appears and the ground(VSS). The n-type MOS field effect transistor(N2) is subjected to conduction control based on an identical address signal(A) and turned off under a state where a potential difference appears between the node(Q) and the ground(VSS). Leakage current passage is limited by the n-type MOS field effect transistor(N2) and current consumption is suppressed. Furthermore, lowering of gate threshold voltage of the n-type MOS field effect transistor(N2) is suppressed by contriving the layout of gate region or employing a high threshold voltage.
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