METHOD FOR IMPROVING JUNCTION CAPACITANCE OF SEMICONDUCTOR DEVICE USING SELECTIVE INSULATION LAYER

摘要

PURPOSE: A method for improving junction capacitance of a semiconductor device using a selective insulation layer is provided to embody a shallow source/drain and to prevent a latch-up phenomenon by forming an oxide layer while using the selective insulation layer instead of a buried oxide layer, and to prevent off-current from increasing by controlling a kink effect in a voltage characteristic of the semiconductor device. CONSTITUTION: A mask is formed in a region for the source/drain of the first semiconductor substrate(100). The surface of the first semiconductor substrate is oxidized to form the selective insulation layer(104) by using the mask. The mask is eliminated. A process for easily sawing the surface of the second semiconductor substrate is performed. The first and second semiconductor substrates are bonded together while the first semiconductor substrate faces downward and the second semiconductor substrate faces upward. The surface of the second semiconductor substrate wherein the process for easily sawing the second semiconductor substrate is performed faces upward. The surface is polished. A gate pattern and a source/drain region(116,118) are formed on the second semiconductor substrate.