| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrode structure of a semiconductor device which realizes low resistance as well as semiconductor package. SOLUTION: The electrode structure of an MOS high-power semiconductor device 10 comprises AL electrode layers 15 and 17, formed of AL on the upper surface of the semiconductor device 10, connected to a gate or a source of an MOS transistor, respectively, and metal plated layers 35 and 37 formed of the metal material soldered to the surfaces of the AL electrode layers 15 and 17, respectively. The AL electrode layers 15 and 17 are connected to lead terminals 54 and 53 through the metal plated layers 35 and 37, a wire 104, and a Cu connection plate 55, respectively. |
