THERMOELECTRIC SEMICONDUCTOR MATERIAL, ITS PRODUCING METHOD AND THERMOELECTRIC MODULE AND HOT FORCING METHOD EMPLOYING IT

摘要

PROBLEM TO BE SOLVED: To produce a thermoelectric semiconductor material having a sufficient strength and an excellent figure of merit Z at a high yield. SOLUTION: Material powder is mixed to have a desired composition and fused thermally to produce a solid solution ingot of thermoelectric semiconductor having a rhombohedral structure (hexagonal structure). That ingot is crushed to form solid state powder which is then processed to have a uniform particle size. Subsequently, the solid solution powder is subjected to pressure sintering, hot forging and plastic deformation thus arranging the crystal grains of powdery sintered texture in a crystal orientation exhibiting an excellent figure of merit.