| 摘要 |
PROBLEM TO BE SOLVED: To suppress leakage between regions of the same conductivity type due to an inversion layer generated along the inside wall of a trench. SOLUTION: An element region 4 is enclosed with a trench 3 to reach an insulating layer from the surface side of an SOI substrate for insulated separation. Related to the element region 4, a base contact region 42, first and second collector regions 43 and 45, and an emitter region 44 are formed on the surface layer of a base region 41, with the first and second collector regions 43 and 45 having different electric potentials. A protruded part 3a, protruding toward the inside of the element region 4, is formed between a part facing the first collector 43 and a part facing the second collector region 45 toward the inside wall off the trench 3.
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