| 摘要 |
PROBLEM TO BE SOLVED: To restrain dispersion in remaining film thickness of a layer insulation film on a fuse, without causing the number of processes to increase, even if a TEOS-SiO2 film or TEOS/O3-SiO2 film is included in a layer insulation film on a fuse. SOLUTION: After an opening part has been formed in an Si3N4 film 15 by using a photoresist pattern 17 as a mask, an opening part is formed in a PSG film 13, a TEOS-SiO2 film 9 and a BPSG film 5 on a fuse 3 by dry etching using mixture gas of CF4 gas, CHF3 gas, Ar gas and O2 gas as etching gas, and a trimming window opening part 19 is thereby formed. At the same time, a bonding pad opening part 21 is formed, by forming an opening part in the PSG film 13 on the fuse 3 and the TEOS-SiO2 film 9 on a bonding pad electrode 11. Dispersion in the etching rate of a layer insulation film including the TEOS- SiO2 film 9 is restrained by mixing O2 gas in etching gas.
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