| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device capable of effectively suppressing propagation of the noise generated by a logic unit to a memory cell of a memory and having a simple structure in a process. SOLUTION: The semiconductor device comprises a logic unit 2 and the memory 3 on a silicon substrate 1 which satisfies <BMD>>=1.0×108 [pieces/ cm3] and Log10(<BMD>)/(WDZ)>=0.2. |
