| 摘要 |
PROBLEM TO BE SOLVED: To restrain operation failure of a device caused by charges charged up into an insulating film from a gate electrode. SOLUTION: This semiconductor integrated circuit is provided with an information storage circuit in which a plurality of unit storage elements are aligned whose elements have structures where capacitors and transistors formed on an element-forming region of a substrate are connected. The transistor is provided with a gate electrode 105 which is formed in a part of the element forming region and collectively formed with a word line 113; a pair of semiconductor regions 108, 109 which are formed on a surface of the element-forming region; first insulating films 106, 107 which are formed on an upper part and a side part of the gate electrode 105; a new electrode 112 which is formed on the insulating film 106 on the one semiconductor region, being in parallel with the gate electrode 105 by using conductive material; an interlayer insulating film 110 formed on the substrate; a contact 111 which is formed so as to be electrically connected with the upper part of the other semiconductor region; and a bit line 114 which is formed so as to be electrically connected with the contact 111. |
