发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve detection precision of a VCE voltage by reducing a floating inductance caused by wiring. SOLUTION: Related to a semiconductor device, a power chip 110, a VCE- voltage detecting diode chip 120 which detects a VCE voltage of the power chip 110, and a drive circuit 210 comprising an excessive current detecting circuit are built in the same vessel. A cathode electrode of the VCE-voltage detecting diode chip 120 is connected to the collector electrode of the power chip 110 on the same conductor surface, while an anode electrode is connected to a VCE-voltage detecting terminal DVCE of the drive circuit 210 comprising the excessive current detecting circuit, while being led out with an aluminum wire or the like. Thus, the collector electrode of the power chip 110 is connected to the cathode electrode of the VCE-voltage detecting diode chip 120 by a very short distance on the same conductor surface.
申请公布号 JP2002110986(A) 申请公布日期 2002.04.12
申请号 JP20000296126 申请日期 2000.09.28
申请人 FUJI ELECTRIC CO LTD 发明人 MATSUDA NAOTAKA;SOYANO SHIN;MOMOTA SEIJI
分类号 H01L21/60;H01L23/62;H01L27/04;H01L29/739;H01L29/78;H03K17/08;H03K17/60 主分类号 H01L21/60
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