| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency semiconductor device exhibiting high heat dissipation efficiency while sustaining good high frequency characteristics. SOLUTION: The semiconductor device comprises a plurality of wiring patterns for chip 3a and 3g formed on the first major surface of a modular substrate 2, a semiconductor chip 1 flip-chip mounted on the modular substrate 2, a plurality of connecting members (ball like electrodes) 4a and 4g connected with the plurality of wiring patterns for chip 3a and 3g, a mounting substrate 8 having a plurality of mounting wiring patterns 12a and 12c connected, respectively, with the plurality of connecting members 4a and 4g on the surface thereof, and a first thermally conductive member 9 for thermally connecting the rear surface of the semiconductor chip 1 and the surface of the mounting substrate 8. Heat generated from the semiconductor chip 1 can be dissipated directly to a mounting substrate 81 trough the first thermally conductive member 9. |
