THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND LIQUID-CRYSTAL DISPLAY DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a channel etched thin-film transistor of proper characteristics and its manufacturing method as well as a liquid-crystal device using it. SOLUTION: There are provided an amorphous silicon film 14 functioning as a channel region, a source region 15 and a drain region 16 formed on the amorphous silicon film 14, and an insulating film 19 formed between the source region 15 and the drain region 16 on the amorphous silicon film 14. The source region 15 and the drain region 16 are formed, by etching a part of the thin film comprising amorphous silicon formed on the amorphous silicon film 14, until reaching at least the amorphous silicon film 14, with the amorphous silicon film 14 exposed to a plasma atmosphere containing hydrogen.