| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where metal-containing materials different in work function between an N-type MISFET and a P-type MISFET are used for gate electrodes and an electrode material low in resistance is used for a gate electrode, and its manufacturing method. SOLUTION: The gate electrode of an N-type MIS transistor possesses a hafnium nitride film 112 which comes into contact with a gate insulating film 111 and whose Fermi level is positioned on the side of the conductive band at the roughly center of the band gap of a silicon substrate, and aluminum 115 which is made on the hafnium nitride film 112, and the gate electrode of a P-type MIS transistor possesses a graphitized organic application film 117 which contacts with the gate insulating film 111 and whose Fermi level is positioned on the side of the valence band from the roughly center of the band gap of the silicon substrate and aluminum 115 which is made on the graphitized organic application film 117, and the graphitized organic application film 117 is not made at the side of the aluminum 115. |
