PHOTOELECTRIC DEVICE HAVING TRANSPARENT OHMIC CONTACT AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a photoelectric device having a transparent ohmic contact is provided to form an ohmic contact wherein a contact resistance value is very low and transmissivity is increased by 75 percent, by including a transparent indium-tin-oxide(ITO) layer or Co/ITO layer on a gallium nitride layer formed a specific substrate. CONSTITUTION: The gallium nitride layer is formed on the substrate. A pretreatment process is performed to clean the surface of the gallium nitride layer. The ITO layer is deposited on the pretreated gallium nitride layer. A heat treatment process is performed regarding the substrate having the ITO layer to form an ohmic contact between the gallium nitride layer and the ITO layer.