| 发明名称 |
HEAT TREATING APPARATUS AND HEAT TREATING METHOD |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor substrate heat treating apparatus and a heat treating method which realize a high accuracy heat treatment. SOLUTION: The treating apparatus 1 having a halogen lamp 16 for heating a mounted semiconductor substrate 30 comprises a guard ring 21 supporting a semiconductor substrate 30 at least at three points and a rotator 24 for revolving the guard ring 21 to spin the substrate 30 in a specified plane while the halogen lamp 16 is heating the substrate 30 mounted on the guard ring 21.</p> |
| 申请公布号 |
JP2002110581(A) |
申请公布日期 |
2002.04.12 |
| 申请号 |
JP20000293022 |
申请日期 |
2000.09.26 |
| 申请人 |
TOKYO ELECTRON LTD |
发明人 |
SAKUMA TAKESHI;SHIGEOKA TAKASHI;RI KAZUNARI |
| 分类号 |
H01L21/683;H01L21/205;H01L21/26;H01L21/68;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/683 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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