| 摘要 |
PROBLEM TO BE SOLVED: To provide a package for semiconductor devices formed by a composite magnetic material that can prevent deterioration in magnetic characteristics (μ'r,μ"r, and tanδ) at a high frequency exceeding 1 GHz appearing in ferrite powder/resin composite magnetic materials, and Fe-Si soft magnetic material powder/resin composite magnetic materials, and can wipe the generation of a void in forming. SOLUTION: The package 5 for covering at least one portion around a semiconductor chip 2 is formed by the composite magnetic material containing the flat soft magnetic material powder having an aspect ratio of 20 or more, ferrite powder having a particle size of 100μm or less, and a resin-bonding material. The flat soft magnetic material powder is set to at least one of Fe-Si, Fe-Si-Al, Fe-Ni, Fe-Co, and Fe-Cr-Al bases. |
