SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate together with its manufacturing method which provides full gettering ability. SOLUTION: The semiconductor substrate comprises a region 32, which comprises voids functioning as a gettering site at a density of 108 pieces/cm3 or more. The size of the void is preferably 10 nm-0.5μm as the diameter of a ball, having the same volume as that of the void.