| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor of a low gate voltage which is manufactured without using process at high temperatures. SOLUTION: A thin-film transistor is provided which comprises a gate electrode 2, a gate insulating layer 3, a source electrode 4, a drain electrode 5, and a channel generation semiconductor layer 6 formed on a substrate 1. Here, the gate insulating layer 3 is used as high-dielectricity inorganic compound particles 3-1 which are diffused in an amorphous insulator 3-2.
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