| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is excellent in noise property, etc., and has plural kinds of thickness of gate insulating films easy of manufacture, and its manufacturing method. SOLUTION: A semiconductor device is constituted of a laminate consisting of a thin silicon nitride film 304, a thick oxide film or a thick nitride film 303, and a film 305 different from them, all of which are gate insulating films different in thickness. In a method of manufacturing the semiconductor device, a sacrificed oxide film is used, and in a region where a thin gate insulating film is required, this is removed and a nitride film is formed. A sacrificed oxide film in other region is peeled off and oxidation is performed. In other method, after formation of the oxide film, a nitriding-resistant film is stacked in a region where a thick oxide film is required, and nitriding is performed.
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