发明名称 PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To had a liner temperature and to stabilize etching characteristics, using a structure which is easy for maintenance. SOLUTION: This device is provided with a liner 37, arranged detachably on the inner wall of a treatment chamber 31, in order to prevent a product of an etching reaction from attaching to the treatment chamber 31 and a heater 38 for heating the liner 37. A means for measuring a temperature of the liner 37 and a means for controlling the heater 38, so as to attain desired temperature of the liner 37, based on the temperature of the liner 37 measured by the temperature measuring means are provided. As a result, the temperature of the liner 37 can be monitored and controlled directly. Accordingly, there are no variations in attachment of the liner 37 after maintenance, changes in temperature of the liner 37 depending on the individual of the liner 37 and changes in a resist selection ratio. Then, a processing failure of the semiconductor devices can be eliminated, and the number of factors for the reduction in the yield are reduced.
申请公布号 JP2002110635(A) 申请公布日期 2002.04.12
申请号 JP20000303115 申请日期 2000.10.03
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 BITO YOJI;IKEHATA KOICHI
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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