| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory which is low in cost and highly integrated, and a recording-and-reproducing device of the non-volatile memory. SOLUTION: A GeSbTe thin film 412 is formed as a chalcogen semiconductor on a glass substrate 411 by the DC sputtering method, a resist is coated, and the form of a wiring having two terminals is made from the GeSbTe by a lithographic dry etching. The wiring 431 has a dog-bone-like form which is arranged in an alternation. After the GeSbTe is processed to from the wiring, a thin film of SiO2 413 is formed by the RF sputtering method, the resist is coated, and apertures are provided at the terminals 421 and 422 of the wiring with the lithographic dry etching. Lastly, the GeSbTe changes from an amorphous phase to a crystal phase by heat-treatment. Accordingly, since addressing is executed by a detecting method of the quantity of a reflecting light with scanning with a laser beam without using a transistor structure, a word-bit line is not required and thereby the non-volatile memory of highly recording density having a simple wiring structure is realized at low cost. |
