| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing an array substrate comprising the steps of simultaneously patterning a three-layer metal film (Mo/Al/Mo) and multilayer nonmetallic film (SiNx/aSi:H/n+-type a-Si:H), by using one mask pattern capable of forming a stepwise cut of a film covering the multilayer film pattern and sufficiently preventing a fault due to the cut. SOLUTION: The method for manufacturing the array substrate comprises the step of patterning the three-layer metal film 5 at stages of just etching by wet etching using a mixed acid (first etching). The method further comprises the steps of then removing etching residue of a bottom Mo layer 51 by plasma etching under the same resist pattern 9, and removing a protrusion 54 of a top Mo layer 53 at an end face of the pattern of the three-layer metal film (first stage of second etching). The method also comprises the step of patterning a three-layer nonmetallic film 6 below the same resist pattern 9 by plasma etching (second stage of second etching).</p> |
