| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-mobility thin-film transistor, with good reproducibility. SOLUTION: An amorphous semiconductor thin film, in which any of the concentrations of carbon, nitrogen and oxygen is 5×1019 cm-3 or lower is irradiated with a laser beam of continuous oscillation for melting, and then is re-crystallized to provide a semiconductor thin film which is used in a channel formation region. By selecting a crystallization method such as this, a thin-film transistor of high mobility is provided with good reproducibility.
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