| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate of a semiconductor device and its production method in which production cost can be reduce by facilitating the dicing of a wafer. SOLUTION: An oxide film 2 is formed on a silicon wafer 1 and coated with resist, which is then patterned into a desired shape of a plurality of burying holes before the oxide film 2 is etched using buffer hydrofluoric acid. Subsequently, the silicon wafer 1 is wet etched using tetramethyl ammonium hydroxide solution to make square burying holes 5 of 250μm deep. Thereafter, the oxide film 2 on the entire surface is etched using buffer hydrofluoric acid and the bottom part of the burying hole 5 is coated with spin on glass agent thus forming a thin film of silicon oxide, i.e., an SOG film 3. Finally, a diamond substrate 4 of 250±10μm is mounted on the SOG film 3 and then they are heat treated in three stages in a clean oven.
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