| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device reduced damages and improved in reliability, and to provide a method for manufacturing the same. SOLUTION: A ferrodielectric capacitor structure is formed in a first trench using steps in which the first trench is formed on the interlayer insulating film 3 formed on a Si substrate 1; the surface of the Si substrate is exposed; a dielectric film 4, a Pt film 5 and a ferrodielectric film 6 and a Pt film 7 are deposited on the interlayer insulating film 3 including the first trench; the dielectric film 4, the Pt film 5 and the ferrodielectric film 6 and the Pt film 7 are deposited on the interlayer insulating film 3 planarized and removed to leave the dielectric film 4, the Pt film 5 and the ferrodielectric film 6 and the Pt film 7 in the first trench. |
