| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a silicon thin film or a silicon oxide thin film having fever defects, with which a heating temperature is set lower than the conventional cases and heating time can be shortened, and to provide the manufacturing method of an electronic device. SOLUTION: In the manufacturing method, the silicon thin film or the silicon dioxide thin film is obtained by heating organosilicon nanocluster at 100 to 1,500 deg.C under the irradiation with plasma or oxygen plasma or the silicon thin film or the silicon oxide thin film is formed by the manufacturing method. |
