| 摘要 |
PROBLEM TO BE SOLVED: To realize a low manufacturing cost and improve off-characteristics with no degradation in on-characteristics, related to a power device such as an IGBT, for improved trade-off. SOLUTION: On one side of a semiconductor substrate 11, an N-type buffer layer 12 and a P-type collector layer 10 are formed. The P-type collector layer 10 is set shallow, with a low dose amount for realizing the so-called 'low injection emitter structure'. A breakdown strength is assured by the thickness of an N-type drift layer 13. On the other side of the semiconductor substrate 11, a P-type base layer 14, an N-type emitter layer 15, and a P-type contact layer 16 are formed. An N-type low resistance layer 17 reduces the junction FET effect. An emitter electrode 18 contacts the N-type emitter layer 15 and the P-type contact layer 16, while a collector electrode 21 contacts the P-type contact layer 10. A gate electrode 20 is formed on a gate insulating film 19A, on a channel region of a surface part of the P-type base layer 14.
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