LUMINESCENCE COMPOUND THIN FILM AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a luminescence compound thin film is provided to form a thin film having a flat surface characteristic and an effective photoluminescence characteristic, by growing a thin film of a compound material on a sapphire substrate by a laser ablation method in which a target composed of ZnO and Zn3P2 at a mole ratio of 1:9 is used. CONSTITUTION: A semiconductor compound thin film where ZnO and Zn3P2 are compounded at a predetermined mole ratio is deposited on the upper surface of a base substrate to enable luminescence in a blue region. A luminescence Zn3P2-ZnO compound thin film is fabricated by a pulse laser deposition(PLD) method in which the compound thin film is deposited on the sapphire substrate.