EPITAXIAL GROWTH OF NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element in which a transition density is reduced. SOLUTION: The semiconductor element 10 comprises polynucleus 2 between a board 1 and an AlGaInN compound semiconductor 3. The transition density induced due to a difference of crystal lattice between the board 1 and the semiconductor 3 is remarkably reduced, and a growth of the semiconductor 3 is improved.