| 摘要 |
PROBLEM TO BE SOLVED: To provide an LED array whose elements are increased in light emission intensity. SOLUTION: On one main surface of a semiconductor substrate 9, a one- conduction type buffer layer 10, a light reflecting layer in laminate structure of layers 11a and 11b, a one-conduction type semiconductor clad layer 12, a reverse-conduction type semiconductor active layer 13, and a reverse-conduction type semiconductor clad layer 14 are sequentially laminated and further a reverse-conduction type contact layer 15 and one electrode 16 are sequentially laminated nearby an end part on the reverse-conduction type semiconductor clad layer 14. On the other main surface of the semiconductor substrate 9, the other electrode 17 is formed. The etching rate of the light reflecting layer is larger than both the etching rates of the one-conduction type buffer layer 10 and one-conduction type semiconductor clad layer 12. |
