METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To improve insulation breakdown resistance (reliability) of a copper wiring formed, using the Damascene method. SOLUTION: A method for manufacturing a semiconductor integrated circuit device comprises the steps of sequentially treating it for reducing and acid cleaning by alkali cleaning, hydrogen annealing or the like in the case of cleaning after CMP. The method further comprises the steps of hydrogen plasma treating and ammonia plasma treating a semiconductor substrate 1, prior to the formation of an insulating film 19b for a cap film, after cleaning after the CMP. Thus, embedding wiring 23a containing a copper as a main component is formed on an interlayer insulating film constituted of an insulating material having a low permittivity.