发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent corrosion of a wiring due to a battery effect by suppressing deposition of Cu. SOLUTION: When a Cu atom is deposited on the grain boundary of a metal wiring by a baking processing during a photolithography process or by the hot processing during a RIE process, etc., in working with a metal wiring comprising Al-Cu or Al-Si-Cu, the Cu on the grain boundary of the metal wiring forms solid solution again in the metal wiring through, for example, a hot pressure (for example, 300 deg.C or higher) and a cooling processing (cooling up to about 150 deg.C at cooling speed 1 deg.C/second or faster) just after the RIE processing. Then, by a chemical liquid processing and a pure water processing for removing a reactive product (residue) generated at the RIE, electrochemical reaction (battery effect) will not take place during the pure water processing, nor corrosion will occur at the metal wiring.
申请公布号 JP2002110681(A) 申请公布日期 2002.04.12
申请号 JP20000296833 申请日期 2000.09.28
申请人 TOSHIBA CORP 发明人 OZAKI HISAKI
分类号 H01L21/28;H01L21/302;H01L21/306;H01L21/3065;H01L21/3205;H01L21/3213;H01L23/52;(IPC1-7):H01L21/321;H01L21/320 主分类号 H01L21/28
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