| 摘要 |
PROBLEM TO BE SOLVED: To reduce the dark current and to improve the reliability of an avalanche photodiode in mesa structure. SOLUTION: The conductivity nearby mesa flank is changed in type and intensity so that a pn junction and a carrier multiplication layer applied with a high electric field are not exposed to the mesa flank. Further, the circumference of the flank of a superlattice multiplication layer exposed by impurity diffusion is made of uniform alloy. Those are effective in eliminating the influence of the mesa flank on a signal current.
|
