| 摘要 |
PROBLEM TO BE SOLVED: To form a groove or a hole of high aspect ratio. SOLUTION: When a hole 3 is shaped in an insulation film 1 through selectively etching the insulation film 1 subjecting it to plasma etching treatment, by using C5F8, O2 and Ar etching gas for the insulation film 1 formed of silicon oxide, etching treatment is at first performed under conditions of weak deposition characteristics of a polymer layer and then is successively subjected to, with switching of the conditions to one of strong deposition characteristics. |
