| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the bonding diameter, having proper bonding strength and proper circularity and proper loop-forming property can be secured simultaneously, even if small balls are used for bonding when bonding with a narrow pitch of 60 μm or smaller, and to provide the bonding method. SOLUTION: In the semiconductor device where a wire is bonded to the electrode on a semiconductor part using ball-bonding method, a bonding wire for a semiconductor implementation where one or more kinds of elements that comprise Ca, Be, noble metal elements and rare-earth elements are contained by 20 to 10,000 wt.ppm in total and the remainders are Au and the unavoidable impurities is used; and by means of bonding method where an initial ball having a diameter 1 to 1.3 times the CD diameter of the capillary used, when the bond wire is connected to an electrode on a semiconductor part is formed on the tip of the wire and then the bond wire is bonded, the ball part of the wire is connected to the electrode. |
