| 摘要 |
PROBLEM TO BE SOLVED: To provide a FET driving circuit capable of increasing a driving voltage to a FET without dropping an AC characteristic. SOLUTION: In a driving circuit 2, a first resister R1 and a serial body 6 of a diode D1 and a second resister R3 is connected in shunt with the resister R1 as a bypass circuit 3 to establish a connection between a gate electrode G and a source electrode S. When a transistor 7 is turned on, the circuit 3 has high impedance, and when turned off, has low impedance. Thus, when turned on, the driving voltage with high voltage can be applied to the transistor 7 to reduce a loss with dropping an on-resistance of the transistor 7, and when turned off, electric charges charged between a gate and source can be discharged in a short time, so that the AC characteristic of a switching device 1 can be improved. |
