| 摘要 |
PROBLEM TO BE SOLVED: To provide a p-type Si semiconductor radiation detector that can be used under practically advantageous measurement environment and also has a high energy resolution by using a new hole supply method. SOLUTION: A high acceptor concentration section (H-Si) 11 and a low acceptor concentration section (L-Si) 12 are joined, and rectifying electrode 13 and a resistive electrode 14 are provided at the high acceptor concentration section 11 and the low acceptance concentration section 12, respectively. By applying and negative voltages to the high acceptor concentration section 11 and the low acceptor concentration section 12, respectively, at normal temperature, a hole h+ is supplied from the high acceptor concentration section 11 to the low acceptor concentration section 12. By cooling to approximately 1 K in this state, h+ that is supplied to the low acceptor concentration section 12 is captured by boron in B- or B0 state, and B+ is formed. When radiation gives energy to B+ via a phonon, h+ is released from B+, is moved to the electrode 14 of the low acceptor concentration section 12, and is taken out as current, thus detecting radiation.
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