| 摘要 |
PROBLEM TO BE SOLVED: To avoid short circuiting and to improve yield by preventing the release of a long wiring which does not contact except only one position per cell block as a ground wiring. SOLUTION: A semiconductor device comprises a metal wiring 13, formed on an insulating film (gate oxide film 21, a nitride film 22 and a silicon oxide film 23) formed on a substrate (silicon substrate 11). The semiconductor device further comprises a support contact 20, formed at prescribed intervals between the wiring 13 and the film 12 on the film 12, to ensure adhesive properties thereof.
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