SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD OF THE SAME AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate or the like, capable of fully preventing lowering of the conducting characteristic of metal wiring formed in a recess part, such as trenches and holes. SOLUTION: The semiconductor substrate 1 provides an insulation layer comprising SiO2 or the like of a single layer, forming a trench 50 (first recess part) making the recess part on a base layer 100 comprising Si or the like. In addition, the cross section of the trench 50 is substantially trapezoidal, and relation D1<Dmax is satisfied (D1 indicates the opening width of a direction orthogonal in the extending direction of the trench 50, and Dmax indicates maximum width in a space in the trench 50, namely, the bottom face width of a direction orthogonal in the extending direction of the trench 50 in Figure 1).