| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a structural substrate with proper planarity of the surface which comprises a ridge part, formed partially on the surface to project from the surface of the substrate, and to provide a manufacturing method of a semiconductor device using the structural substrate. SOLUTION: A GaAs-group substrate 10, after forming a ridge part 10a, is subjected to at least two of the following treatments in the order of treatment with an organic solvent, plasma treatment and surface reduction treatment. In the treatment with an organic solvent, for example, the substrate 10 is immersed in acetone, followed by rinsing with water and them drying. Ultrasonic cleaning may be added to the acetone treatment and the water rinsing. As the plasma treatment, the substrate is subjected to surface oxidation with an oxygen plasma and then to reduction treatment of immersing the substrate in 1 hydrogen 2 ammonium difluoride, as the surface reduction treatment. As a result, roughness of the substrate 10 can be alleviated.
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