SINGLE SIDE DIFFUSED SILICON WAFER AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To lessen the crystal defect in a single side diffused silicon wafer. SOLUTION: The single side diffused silicon wafer has a laminate structure composed of a first n-type silicon layer 11 being a no-impurity-diffused region and a second n-type silicon layer 13 being an impurity-diffused region. The sheet resistance of the second n-type silicon layer 13 is 0.085-0.115Ω.