METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To precisely control the implanting amount of an element in a method for obtaining a crystalline silicon by heat treatment of about 4 hours at about 550 deg.C by using an element for promoting a crystallization. SOLUTION: A method for manufacturing a semiconductor device comprises the steps of forming an amorphous silicon film on a board, contacting a solution containing the element for promoting the crystallization of the amorphous silicon film with a part of the silicon-film to hold the solution, and heating the silicon film to crystallize the silicon film. In this method, the concentration of the element in the solution is 200 ppm or less. The concentration of the element in the silicon film after the crystallization is 1×1016 to 1×1019 atoms/cm3.