| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-mobility thin-film transistor at a good yield. SOLUTION: In a first chamber, an amorphous semiconductor thin film in which any of the concentrations of carbon, nitrogen and oxygen is 5×1019 cm-3 or lower is formed, and the film is transported into a second chamber, without being exposed to an atmosphere. In the second chamber, the amorphous semiconductor thin film is irradiated with a laser beam for crystallization, and an acquired semiconductor thin film is used in a channel forming region. With a crystallizing method like this, a high-mobility thin-film transistor is presented at good yield.
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