| 摘要 |
PURPOSE: Provided are a photomask and a method for designing the mask pattern in which the dimension and deformation of the hole pattern can be corrected by a small pitch. CONSTITUTION: The photomask comprises a transparent substrate(101), a halftone film(102) and a light shielding film(103). A halftone region is formed in the region at least between one hole pattern and the other hole pattern adjacent to each other and occupies as continuing from the end face of the above one hole pattern to the end face of the other hole pattern near the first end face. The width of the halftone region in the direction perpendicular to the straight line connecting to the centers of the adjacent hole patterns depends on the distance between the centers of the adjacent hole patterns. |
