| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problems of characteristic deterioration due to a short circuit or the like caused by a ruggedness, not obtaining light confinement effects and of a low short circuiting current density. SOLUTION: A thin film crystalline silicon solar cell comprises a metal film 1c to become the rear electrode, silicon semiconductor films 1e, 1f and 1g having a semiconductor junction, a transparent conductive film 1h, and a metal film 1i to become a front electrode laminated on a board 1a. In this case, the surface of the board 1a has a fine rugged structure 1b, and a curve for connecting vertexes of the protrusions becomes a recess shape. A distance between vertexes of the adjacent protrusions is 0.01 to 5μm. A difference between high and low heights between a lowermost part and the vertex of the curve for connecting the vertexes of the adjacent protrusions is 0.01 to 1μm.</p> |
