| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing therefor which maintain a stable via hole structure and cope with a fine patterning in a design rule, even if a cleaning process to an oxide or the like on an underlayer interconnection surface is conducted. SOLUTION: The sidewall of a via hole, reaching an underlayer surface, is formed at an angle larger than 85 degrees with respect to the underlayer surface, and a boundary portion having a curve surface or a slanted surface is formed in the vicinity of an interconnection trench reaching a top of the via hole. In the case of the curve surface, the radius of curvature of the curved surface is formed smaller than one half the via hole height. In the case of the slanted surface, the slanted surface is formed at an angle larger than 90 degrees but less than 160 degrees, with respect to the sidewall of the via hole.
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