| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for which the deterioration of electric characteristics is suppressed, and to provide a method of manufacturing the device. SOLUTION: The method of manufacturing the semiconductor device includes a step of forming a gate insulating layer 20 and a silicon layer 32 on a semiconductor layer 10, a step of forming sidewall insulating layers 62 on the sides the silicon layer 32, and a step of forming a planarized first insulating layer 50. The method also includes a step of forming a recessed section 80, by removing the silicon layer 32 so that the gate insulating layer 20 is not exposed, a step of partially filling the recessed section 80 with a metal layer 60, and a step of forming a second insulating layer 60 in the recessed section 80. In addition, the method also includes a step of forming a through-hole 90a by etching the first insulating layer 50 and step of forming a contact layer 92a in the through-hole 90a. The second insulating layer 60 and sidewall insulating layers 62 are made of materials, which are different from that of the first insulating layer 50.
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