WIRING FORMING METHOD, POLISHING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for performing chemical mechanical polishing (CMP) over a Cu thin film at a high polishing rate while suppressing corrosion of Cu wiring. SOLUTION: A Cu thin film is polished with use of a polishing solution added by epihalohydrin-modified polyamide, and after the CMP, is rinsed with an aqueous solution of epihalohydrin-modified polyamide.