| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can simplify the manufacture process and can reduce the occupation area of a memory cell at the same time, and its manufacturing method. SOLUTION: A MOS transistor for storage is constituted with an n+-type polycrystalline silicon film 12 as a gate electrode, with a silicon oxide film 17 as a gate insulating film, and with n+-type impurity diffusion layers 20 and 21, respectively, as a source region and a drain region. A diode is constituted by the pn junction between the n+-type polycrystalline silicon film 12 and the p+-type polycrystalline silicon film 13, and a MOS transistor MTr for transfer is constituted with an n+-type polycrystalline silicon film 16 as a gate electrode, with a silicon oxide film 19 as a gate insulating film, and with n+-type impurity diffusion layers 21 and 25, respectively, as a source region and a drain region, and these members are all buried in a trench 11. |
